Product Summary
The CM1200DB-34 is a 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Module.
Parametrics
CM1200DB-34 absolute maximum ratings: (1)VCES, Collector-emitter voltage: 1700V; (2)VGES, Gate-emitter voltage: ±20V; (3)IC, collector current: 1200A; (4)ICM, collector current: 2400A; (5)IE, emitter current: 1200A; (6)IEM, emitter current: 2400A; (7)PC, Maximum power dissipation: 6900W; (8)Tj, Junction temperature: -40 to 150℃; (9)Top, Operating temperature: -40 to 125℃; (10)Tstg,Storage temperature: -40 to 125℃; (11)Viso, Isolation voltage: 4000V; (12)tpsc, Maximum short circuit pulse width: 10μs.
Features
CM1200DB-34 features: (1)IC: 1200A; (2)VCES: 1700V; (3)Insulated Type; (4)2-element in a Pack; (5)Cu Baseplate; (6)Trench Gate IGBT: CSTBT; (7)Soft Reverse Recovery Diode.
Diagrams
Image | Part No | Mfg | Description | ![]() |
Pricing (USD) |
Quantity | ||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
![]() CM1200DB-34N |
![]() Other |
![]() |
![]() Data Sheet |
![]() Negotiable |
|
||||||||||||
Image | Part No | Mfg | Description | ![]() |
Pricing (USD) |
Quantity | ||||||||||||
![]() |
![]() CM1200DB-34N |
![]() Other |
![]() |
![]() Data Sheet |
![]() Negotiable |
|
||||||||||||
![]() |
![]() CM1213-08MR |
![]() ON Semiconductor |
![]() ESD Suppressors 8-Channel ESD Protection Array |
![]() Data Sheet |
![]()
|
|
||||||||||||
![]() |
![]() CM1213A-02SO |
![]() ON Semiconductor |
![]() ESD Suppressors 2-ch. 8KV/1pF Ultra |
![]() Data Sheet |
![]()
|
|
||||||||||||
![]() |
![]() CM1213-04SO |
![]() ON Semiconductor |
![]() ESD Suppressors 4 CHANNEL ESD PROTECTION ARRAY |
![]() Data Sheet |
![]() Negotiable |
|
||||||||||||
![]() |
![]() CM1219-04SO |
![]() ON Semiconductor |
![]() TVS Diode Arrays 4-ch. ESD Protection |
![]() Data Sheet |
![]()
|
|
||||||||||||
![]() |
![]() CM1219-04SE |
![]() ON Semiconductor |
![]() TVS Diode Arrays 4-ch ESD Protection 4pF capacitance |
![]() Data Sheet |
![]()
|
|