(China (Mainland))
Product Summary
The CM1200DB-34 is a 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Module.
Parametrics
CM1200DB-34 absolute maximum ratings: (1)VCES, Collector-emitter voltage: 1700V; (2)VGES, Gate-emitter voltage: ±20V; (3)IC, collector current: 1200A; (4)ICM, collector current: 2400A; (5)IE, emitter current: 1200A; (6)IEM, emitter current: 2400A; (7)PC, Maximum power dissipation: 6900W; (8)Tj, Junction temperature: -40 to 150℃; (9)Top, Operating temperature: -40 to 125℃; (10)Tstg,Storage temperature: -40 to 125℃; (11)Viso, Isolation voltage: 4000V; (12)tpsc, Maximum short circuit pulse width: 10μs.
Features
CM1200DB-34 features: (1)IC: 1200A; (2)VCES: 1700V; (3)Insulated Type; (4)2-element in a Pack; (5)Cu Baseplate; (6)Trench Gate IGBT: CSTBT; (7)Soft Reverse Recovery Diode.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 CM1200DB-34N |
Other |
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Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
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CM1200DB-34N |
Other |
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Data Sheet |
Negotiable |
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CM1200DC-34N |
Other |
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Data Sheet |
Negotiable |
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CM1200E4C-34N |
Other |
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Data Sheet |
Negotiable |
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CM1200HA-24J |
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IGBT MOD SGL 1200V 1200A H SER |
Data Sheet |
Negotiable |
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CM1200HA-34H |
Other |
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Data Sheet |
Negotiable |
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CM1200HA-50H |
Other |
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Data Sheet |
Negotiable |
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