Product Summary
The 1N5407-T is a 3.0A silicon rectifier.
Parametrics
1N5407-T absolute maximum ratings: (1)Peak Repetitive Reverse Voltage, VRRM: 50V; (2)Working Peak Reverse Voltage, VRWM: 50V; (3)DC Blocking Voltage, VR: 50V; (4)RMS Reverse Voltage, VR(RMS): 35V; (5)Average Rectified Output Current @TA = 75℃, IO: 3.0 A; (6)Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method), IFSM: 200 A; (7)Forward Voltage @IF = 3.0A, VFM: 1.0 V; (8)Peak Reverse Current @TA = 25℃, VFM: 5.0μA; At Rated DC Blocking Voltage @TA = 100℃, IRM: 100μA; (9)Typical Junction Capacitance, Cj: 50 pF; (10)Typical Thermal Resistance Junction to Ambient, RJA: 18 K/W; (11)Operating Temperature Range, Tj: -65 to +125℃; (12)Storage Temperature Range, TSTG: -65 to +150℃.
Features
1N5407-T features: (1)Diffused Junction; (2)Low Forward Voltage Drop; (3)High Current Capability; (4)High Reliability; (5)High Surge Current Capability.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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1N5407-TP |
Micro Commercial Components (MCC) |
Rectifiers Standard 800V 3A |
Data Sheet |
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1N5407-T |
Diodes Inc. |
Rectifiers 3.0A 800V |
Data Sheet |
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