(China (Mainland))
Product Summary
The 2SC2904 is a silicon NPN epitaxial planar type transistor specifically designed for high power amplifiers in HF band. The device is suitable for output stage of trnasmitter in HF band SSB mobile radio sets.
Parametrics
2SC2904 absolute maximum ratings: (1)VCBO, collector to base voltage: 50V; (2)VEBO, emitter to base voltage: 5V; (3)VCEO, collector to emitter voltage: 20V; (4)IC, collector current: 22A; (5)PC, collector dissipation: 7.8W at Ta=25℃; 200W at Tc=25℃; (6)Tj, junction temperature: 175℃; (7)Tstg, storage temperature: -55 to 175℃; (8)Rth-c, thermal resistance: 0.75℃/W.
Features
2SC2904 features: (1)high gain: Gpe≥11.5dB at VCC=12.5V, Po=100W, f=30MHz; (2)high ruggedness: ability to withstand 20:1 load VSWR when operated at f=30MHz Po=100W, VCC=15.2V; (3)emitter ballansted construction; (4)low thermal resistance ceramic package with flange.
Diagrams
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 2SC2000 |
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2SC2001 |
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2SC2002 |
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2SC2003 |
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2SC2020 |
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2SC2021 |
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