Product Summary

The STGW20NB60KD is a short circuit proof powermesh IGBT. It uses the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH IGBT, with outstanding performances. The applications of the STGW20NB60KD include: high frequency motor controls, U.P.S, welding equipments.

Parametrics

STGW20NB60KD absolute maximum ratings: (1)VCES Collector-Emitter Voltage (VGS = 0): 600 V; (2)VECR Reverse Battery Protection: 20 V; (3)VGE Gate-Emitter Voltage: ±20 V; (4)IC Collector Current (continuous) at 25℃: 50 A; (5)IC Collector Current (continuous) at 100℃: 25 A; (6)ICM (1) Collector Current (pulsed): 100 A; (7)TSC Short Circuit Withstand: 10 μs; (8)PTOT Total Dissipation at TC = 25℃: 170 W; (9)Derating Factor: 1.2 W/℃; (10)Tstg Storage Temperature, Tj Operating Junction Temperature: – 55 to 150 ℃.

Features

STGW20NB60KD features: (1)off losses include tail current; (2)high current capability; (3)high input impedance (voltage driven); (4)low on-voltage drop (vcesat); (5)low on-losses; (6)low gate charge; (7)very high frequency operation; (8)short circuit rated; (9)latch current free operation.

Diagrams

STGW20NB60KD diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
STGW20NB60KD
STGW20NB60KD
STMicroelectronics
IGBT Transistors N-Ch 600 Volt 20 Amp
Data Sheet
Negotiable 
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
STGW20NB60KD
STGW20NB60KD
STMicroelectronics
IGBT Transistors N-Ch 600 Volt 20 Amp
Data Sheet
Negotiable 
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