(China (Mainland))
Product Summary
The 2N7002DW-7 is a dual N-channel enhancement mode field effect transistor.
Parametrics
2N7002DW-7 absolute maximum ratings: (1)Drain-Source Voltage, VDSS: 60 V; (2)Drain-Gate Voltage RGS ≤ 1.0MΩ, VDGR: 60 V; (3)Gate-Source Voltage, Continuous, VGSS: ±20V; Pulsed: ±40 V; (4)Drain Current, Continuous, ID: 115mA; Continuous @ 100℃: 73mA; Pulsed: 800mA; (5)Total Power Dissipation, Pd: 200mW; Derating above TA = 25℃: 1.60mW/℃; (6)Thermal Resistance, Junction to Ambient, RθJA: 625℃/W; (7)Operating and Storage Temperature Range Tj, TSTG: -55 to +150℃.
Features
2N7002DW-7 features: (1)Dual N-Channel MOSFET; (2)Low On-Resistance; (3)Low Gate Threshold Voltage; (4)Low Input Capacitance; (5)Fast Switching Speed; (6)Low Input/Output Leakage; (7)Ultra-Small Surface Mount Package; (8)Lead Free/RoHS Compliant; (9)Qualified to AEC-Q101 Standards for High Reliability.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 2N7002DW-7 |
Diodes Inc. |
MOSFET 60V 200mW |
Data Sheet |
Negotiable |
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2N7002DW-7-F |
Diodes Inc. |
MOSFET 60V 200mW |
Data Sheet |
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