(China (Mainland))
Product Summary
The MRF6VP41KH is a RF Power Field Effect Transistor. It is designed primarily for pulsed wideband applications with frequencies up to 500 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications.
Parametrics
MRF6VP41KH absolute maximum ratings: (1)Drain--Source Voltage, VDSS: -0.5, +110 Vdc; (2)Gate--Source Voltage, VGS: -6 , + 1 0 Vdc; (3)Storage Temperature Range, Tstg: - 65 to +150℃; (4)Case Operating Temperature, TC: 150℃; (5)Operating Junction Temperature, TJ: 225℃; (6)CW Operation, CW: 1170W at TC =25℃; 4.6W/℃ at Derate above 25℃.
Features
MRF6VP41KH features: (1)Characterized with Series Equivalent Large-Signal Impedance Parameters; (2)CW Operation Capability with Adequate Cooling; (3)Qualified Up to a Maximum of 50 VDD Operation; (4)Integrated ESD Protection; (5)Designed for Push--Pull Operation; (6)Greater Negative Gate--Source Voltage Range for Improved Class C; (7)Operation; (8)RoHS Compliant; (9)In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
Diagrams
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 MRF6VP41KHR5 |
Freescale Semiconductor |
Transistors RF MOSFET Power VHV6 450MHZ 1000W NI1230 |
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MRF6VP41KHR6 |
Freescale Semiconductor |
Transistors RF MOSFET Power VHV6 450MHZ 1000W NI1230 |
Data Sheet |
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MRF6VP41KHR7 |
Freescale Semiconductor |
Transistors RF MOSFET Power VHV6 450MHZ 1000W NI1230 |
Data Sheet |
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MRF6VP41KHSR5 |
Freescale Semiconductor |
Transistors RF MOSFET Power VHV6 450MHZ1000W NI1230S |
Data Sheet |
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MRF6VP41KHSR6 |
Freescale Semiconductor |
Transistors RF MOSFET Power VHV6 450MHZ1000W NI1230S |
Data Sheet |
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MRF6VP41KHSR7 |
Freescale Semiconductor |
Transistors RF MOSFET Power VHV6 450MHZ1000W NI1230S |
Data Sheet |
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