(China (Mainland))
Product Summary
The FM25L256B-G is a 256-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile and performs reads and writes like a RAM. The FM25L256B-G provides reliable data retention for 45 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories.
Parametrics
FM25L256B-G absolute maximum ratings: (1)VDD, Power Supply Voltage with respect to VSS: -1.0V to +5.0V; (2)VIN, Voltage on any pin with respect to VSS: -1.0V to +5.0V and VIN < VDD+1.0V; (3)TSTG, Storage Temperature: -55 to + 125℃; (4)TLEAD, Lead Temperature (Soldering, 10 seconds): 300℃; (5)VESD, Electrostatic Discharge Voltage: 4kV; (6)Package Moisture Sensitivity Level: MSL-1.
Features
FM25L256B-G features: (1)Organized as 32,768 x 8 bits; (2)Unlimited Read/Write Cycles; (3)45 year Data Retention; (4)No Delay Writes; (5)Advanced High-Reliability Ferroelectric Process; (6)Up to 20 MHz Frequency; (7)Direct Hardware Replacement for EEPROM; (8)SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1); (9)Hardware Protection; (10)Software Protection; (11)Low Power Consumption; (12)Low Voltage Operation 2.7V – 3.6V.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 FM25L256B-G |
Ramtron |
F-RAM 256K (32Kx8) 2.7V |
Data Sheet |
Negotiable |
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FM25L256B-GTR |
Ramtron |
F-RAM 256K (32Kx8) 2.7V |
Data Sheet |
Negotiable |
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