(China (Mainland))
Product Summary
The MRF166W is a 40W, 500MHz, 28V RF MOSFET.
Parametrics
MRF166W absolute maximum ratings: (1)Drain–Gate Voltage VDSS: 65 Vdc; (2)Drain–Gate Voltage (RGS = 1.0 MW) VDGR: 65 Vdc; (3)Gate–Source Voltage VGS: ± 40 Adc; (4)Drain Current Continuous ID: 8.0 ADC; (5)Total Device Dissipation @ TC = 25℃ PD: 175Watts; (6)Derate above 25℃: 1.0℃/W; (7)Storage Temperature Range Tstg: –65 to +150 ℃; (8)Operating Junction Temperature TJ: 200 ℃.
Features
MRF166W features: (1)Typical performance at 175 MHz, 28 Vdc. Output power = 40 W. Gain = 17 dB. Efficiency = 60%; (2)Excellent thermal stability, ideally suited for Class A operation; (3)Facilitates manual gain control, ALC and modulation techniques; (4)100% tested for load mismatch at all phase angles with 30:1 VSWR; (5)Low Crss 4.0 pF @ VDS = 28 V.
Diagrams
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 MRF166W |
Other |
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Data Sheet |
Negotiable |
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MRF1.6/5.6 |
Other |
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Data Sheet |
Negotiable |
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MRF1.6/5.6-AP-2.5C |
Hirose Connector |
RF Connectors Obsolete |
Data Sheet |
Negotiable |
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MRF1.6/5.6-AP-59U |
Hirose Connector |
RF Connectors Obsolete |
Data Sheet |
Negotiable |
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MRF1.6/5.6-BCUPA |
Hirose Connector |
RF Connectors Obsolete |
Data Sheet |
Negotiable |
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MRF1.6/5.6-LPJ-179U |
Hirose Connector |
RF Connectors Obsolete |
Data Sheet |
Negotiable |
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MRF1.6/5.6-LR-PC-1 |
Hirose Connector |
RF Connectors Obsolete |
Data Sheet |
Negotiable |
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