(China (Mainland))
Product Summary
The STGW20NB60KD is a short circuit proof powermesh IGBT. It uses the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH IGBT, with outstanding performances. The applications of the STGW20NB60KD include: high frequency motor controls, U.P.S, welding equipments.
Parametrics
STGW20NB60KD absolute maximum ratings: (1)VCES Collector-Emitter Voltage (VGS = 0): 600 V; (2)VECR Reverse Battery Protection: 20 V; (3)VGE Gate-Emitter Voltage: ±20 V; (4)IC Collector Current (continuous) at 25℃: 50 A; (5)IC Collector Current (continuous) at 100℃: 25 A; (6)ICM (1) Collector Current (pulsed): 100 A; (7)TSC Short Circuit Withstand: 10 μs; (8)PTOT Total Dissipation at TC = 25℃: 170 W; (9)Derating Factor: 1.2 W/℃; (10)Tstg Storage Temperature, Tj Operating Junction Temperature: – 55 to 150 ℃.
Features
STGW20NB60KD features: (1)off losses include tail current; (2)high current capability; (3)high input impedance (voltage driven); (4)low on-voltage drop (vcesat); (5)low on-losses; (6)low gate charge; (7)very high frequency operation; (8)short circuit rated; (9)latch current free operation.
Diagrams
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 STGW20NB60KD |
STMicroelectronics |
IGBT Transistors N-Ch 600 Volt 20 Amp |
Data Sheet |
Negotiable |
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STGW12NB60H |
STMicroelectronics |
IGBT Transistors N-Ch 600 Volt 12 Amp |
Data Sheet |
Negotiable |
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STGW12NB60HD |
Other |
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Data Sheet |
Negotiable |
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STGW19NC60H |
STMicroelectronics |
IGBT Transistors 19 A 600V FAST IGBT |
Data Sheet |
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STGW19NC60HD |
STMicroelectronics |
IGBT Transistors 19 A - 600 V Very fast IGBT |
Data Sheet |
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STGW19NC60W |
STMicroelectronics |
IGBT Transistors 19A 600V ULT FS IGBT |
Data Sheet |
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STGW19NC60WD |
STMicroelectronics |
IGBT Transistors N Ch 600V 19A |
Data Sheet |
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