(China (Mainland))
Product Summary
The 2MBI450U4E-120 is an IGBT module.
Parametrics
2MBI450U4E-120 absolute maximum ratings: (1)collector-emitter voltage, VCES: 1200V; (2)gate-emitter voltage, VGES: ±20V; (3)collector current, IC, continuous: 675A at Tc=25℃; 450A at Tc=80℃; ICP, 1ms: 1350A at Tc=25℃; 900A at Tc=80℃; -IC: 450A; -IC pulse, 1ms: 900A; (4)collector power dissipation, PC: 2750W; (5)junction temperature, Tj: 150℃; (6)storage temperature, Tstg: -40 to 125℃; (7)isolation voltage, Viso: 2500VAC.
Features
2MBI450U4E-120 features: (1)zero gate voltage collector current, ICES: 3.0mA max; (2)gate-emitter leakage current, IGES: 600mA; (3)gate-emitter threshold voltage, VGE(th): 4.5 to 8.5V, 6.5V typ; (4)collector-emitter saturation voltage, VCE: 2.1V; (5)input capacitance, Cies: 50nF typ。
Diagrams
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 2MBI100N-060-03 |
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2MBI100NB-120 |
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2MBI100NC-120 |
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Negotiable |
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2MBI100NE-120 |
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Negotiable |
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2MBI100P-140 |
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Negotiable |
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2MBI100PC-140 |
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Negotiable |
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