(China (Mainland))
Product Summary
The CY7C1009-15VC is a high-performance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW chip enable (CE ), an active HIGH chip enable (CE2), an active LOW output enable (OE), and three-state drivers. Writing to the device is accomplished by taking chip enable one (CE1) and write enable (WE) inputs LOW and chip enable two (CE2) input HIGH. Data on the eight I/O pins (I/O0 through I/O7) is then written into the location specified on the address pins (A0 through A16).
Parametrics
CY7C1009-15VC absolute maximum ratings: (1)Storage Temperature: –65 to +150℃; (2)Ambient Temperature with Power Applied:–55 to +125℃; (3)Supply Voltage on VCC to Relative GND: –0.5V to +7.0V; (4)DC Voltage Applied to Outputs in High Z State:–0.5V to VCC + 0.5V; (5)DC Input Voltage: –0.5V to VCC + 0.5V; (6)Current into Outputs (LOW): 20 mA; (7)Static Discharge Voltage: >2001V; (8)Latch-Up Current: >200mA.
Features
CY7C1009-15VC features: (1)High speed: tAA = 10 ns ; (2)Low active power: 1017 mW (max., 12 ns); (3)Low CMOS standby power: 55 mW (max.), 4 mW (Low power version); (4)2.0V Data Retention (Low power version); (5)Automatic power-down when deselected; (6)TTL-compatible inputs and outputs; (7)Easy memory expansion with CE1, CE2, and OE options.
Diagrams
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CY7C006A-20AXC |
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Data Sheet |
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