Product Summary

The UF28100V is a RF Power MOSFET Transistor.

Parametrics

UF28100V absolute maximum ratings: (1)Drain-Source Voltage, VDS: 65V; (2)Gate-Source Voltage, VGS: 20V; (3)Drain-Source Current 12 A; (4)Power Dissipation, Pd: 250W; (5)Junction Temperature, TJ: 200℃; (6)Storage Temperature, TSTG: -55 to +150℃; (7)Thermal Resistance, θJC: 0.7 ℃/W.

Features

UF28100V features: (1)N-channel enhancement mode device; (2)DMOS structure; (3)Lower capacitances for broadband operation; (4)High saturated output power; (5)Lower noise figure than competitive devices.

Diagrams

UF28100V TEST FIXTURE SCHEMATIC

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
UF28100V
UF28100V
M/A-COM Technology Solutions
Transistors RF MOSFET Power 100-500MHz 100Watts 28Volt 10dB
Data Sheet
0-1: $143.92
1-10: $133.17
10-25: $126.35
25-50: $123.37
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
UF2805B
UF2805B
Other

Data Sheet
Negotiable 
UF28100V
UF28100V
M/A-COM Technology Solutions
Transistors RF MOSFET Power 100-500MHz 100Watts 28Volt 10dB
Data Sheet
0-1: $143.92
1-10: $133.17
10-25: $126.35
25-50: $123.37
UF28150J
UF28150J
M/A-COM Technology Solutions
Transistors RF MOSFET Power 100-500MHz 150Watts 28Volt Gain 8dB
Data Sheet
0-1: $202.66
1-10: $182.39
10-25: $172.26
UF28156
UF28156
Other

Data Sheet
Negotiable 
UF281OOH
UF281OOH
Other

Data Sheet
Negotiable 
UF281OOM
UF281OOM
Other

Data Sheet
Negotiable