(China (Mainland))
Product Summary
The UF28100V is a RF Power MOSFET Transistor.
Parametrics
UF28100V absolute maximum ratings: (1)Drain-Source Voltage, VDS: 65V; (2)Gate-Source Voltage, VGS: 20V; (3)Drain-Source Current 12 A; (4)Power Dissipation, Pd: 250W; (5)Junction Temperature, TJ: 200℃; (6)Storage Temperature, TSTG: -55 to +150℃; (7)Thermal Resistance, θJC: 0.7 ℃/W.
Features
UF28100V features: (1)N-channel enhancement mode device; (2)DMOS structure; (3)Lower capacitances for broadband operation; (4)High saturated output power; (5)Lower noise figure than competitive devices.
Diagrams
| Image | Part No | Mfg | Description |  |
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 UF28100V |
M/A-COM Technology Solutions |
Transistors RF MOSFET Power 100-500MHz 100Watts 28Volt 10dB |
Data Sheet |
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| Image | Part No | Mfg | Description | |
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UF2805B |
Other |
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Data Sheet |
Negotiable |
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UF28100V |
M/A-COM Technology Solutions |
Transistors RF MOSFET Power 100-500MHz 100Watts 28Volt 10dB |
Data Sheet |
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UF28150J |
M/A-COM Technology Solutions |
Transistors RF MOSFET Power 100-500MHz 150Watts 28Volt Gain 8dB |
Data Sheet |
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UF28156 |
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Negotiable |
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Data Sheet |
Negotiable |
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Data Sheet |
Negotiable |
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