(China (Mainland))
Product Summary
The DU2840S is a 40W, 2-175MHz, 28V, RF Power MOSFET Transistor.
Parametrics
DU2840S absolute maximum ratings: (1)Drain-Source Voltage, VDS: 65V; (2)Gate-Source Voltage, VGS: 20V; (3)Drain-Source Current, IDS: 8A; (4)Power Dissipation, PD: 125W; (5)Junction Temperature, TJ: 200℃; (6)Storage Temperature, Tstg: -55 to +150℃; (7)Thermal Resistance, θJC: 1.4℃/W.
Features
DU2840S features: (1)N-Channel enhancement mode device; (2)DMOS structure; (3)Lower capacitances for broadband operation; (4)High saturated output power; (5)Lower noise figure than bipolar devices.
Diagrams
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 DU2840S |
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Data Sheet |
Negotiable |
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DU28200M |
Other |
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Negotiable |
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DU2820S |
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Negotiable |
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DU2840S |
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Negotiable |
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DU2860T |
Other |
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Negotiable |
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DU2880V |
Other |
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Data Sheet |
Negotiable |
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DU2860U |
Other |
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Data Sheet |
Negotiable |
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